产品概述
The NDS9948 is a dual P-channel MOSFET produced using PowerTrench® process. It has been optimized for applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). The device is suitable for use with load switch and battery protection applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 2A Continuous drain current
- 1.6A Pulsed drain current
应用
工业, 电源管理
产品信息
- :
- P沟道
- :
- 60V
- :
- 2.3A
- :
- 0.138ohm
- :
- SOIC
- :
- 表面安装
- :
- 10V
- :
- 1.5V
- :
- 2W
- :
- 8引脚
- :
- 175°C
- :
- -
- :
- -
- :
- MSL 1 -无限制