产品概述
The IRF7309PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
应用
工业, 电源管理
产品信息
- :
- 互补N与P沟道
- :
- 30V
- :
- 4A
- :
- 0.05ohm
- :
- SOIC
- :
- 表面安装
- :
- 10V
- :
- 1V
- :
- 1.4W
- :
- 8引脚
- :
- 150°C
- :
- -
- :
- -
- :
- MSL 1 -无限制