产品概述
The FDS8949_F085 is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. It is suitable for use with inverter and power supply applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 6A Continuous drain current
- 20A Pulsed drain current
- Qualified to AEC Q101
应用
工业, 电源管理, 车用
产品信息
- :
- N沟道
- :
- 40V
- :
- 6A
- :
- 0.021ohm
- :
- SOIC
- :
- 表面安装
- :
- 10V
- :
- 1.9V
- :
- 2W
- :
- 8引脚
- :
- 150°C
- :
- -
- :
- AEC-Q101
- :
- MSL 1 -无限制