产品概述
The FDS6990A is a dual N-channel logic level MOSFET produced using advanced PowerTrench process. It is especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
应用
工业, 电源管理
产品信息
- :
- N沟道
- :
- 30V
- :
- 7.5A
- :
- 0.011ohm
- :
- SOIC
- :
- 表面安装
- :
- 10V
- :
- 1.9V
- :
- 1.6W
- :
- 8引脚
- :
- 150°C
- :
- -
- :
- -
- :
- MSL 1 -无限制