FDS6990A

产品概述

The FDS6990A is a dual N-channel logic level MOSFET produced using advanced PowerTrench process. It is especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • Fast switching speed
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability
  • ±20V Gate to source voltage
  • 7.5A Continuous drain current
  • 20A Pulsed drain current

应用

工业, 电源管理

产品信息


:
N沟道

:
30V

:
7.5A

:
0.011ohm

:
SOIC

:
表面安装

:
10V

:
1.9V

:
1.6W

:
8引脚

:
150°C

:
-

:
-

:
MSL 1 -无限制

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