产品概述
The IRF7324PBF is a -20V dual P-channel new trench HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
- Trench technology
- Ultra low on-resistance
- Dual P-channel MOSFET
- Low profile (<1.1mm)
- 2.5V Rated
应用
电源管理
产品信息
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- P沟道
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- 20V
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- 9A
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- 0.018ohm
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- SOIC
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- 表面安装
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- 4.5V
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- 1V
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- 2W
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- 8引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制