产品概述
The IS61WV20488BLL-10TLI is a 2M x 8-bit high-speed low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. It operates from a single power supply and all inputs are TTL-compatible.
- High-speed access time - 10ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE
- CE Power-down
- Fully static operation - no clock or refresh required
应用
计算机和计算机周边, 工业, 通信与网络, 消费电子产品
产品信息
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- 16Mbit
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- 2M x 8位
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- 2.4V 至 3.6V
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- TSOP-II
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- 44引脚
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- 10ns
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- -40°C
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- 85°C
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- -
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- -
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- MSL 3 - 168小时