产品概述
The LY62L205016ALL-55SLI is a 33554432-bit low power CMOS Static Random Access Memory (SRAM) organized as 2097152 words by 16-bit or 4194304 words by 8-bit. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L205016A is well designed for low power application and particularly well suited for battery back-up nonvolatile memory application. The LY62L205016A operates from a single power supply of 2.7 to 3.6V and all inputs and outputs are fully TTL compatible.
- Fast access time - 55ns
- Low power consumption
- Fully static operation
- Tri-state output
- Data retention voltage - 1.5V minimum
应用
计算机和计算机周边, 工业, 通信与网络, 消费电子产品
产品信息
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- 32Mbit
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- 2M x 16位 / 4M x 8位
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- 2.7V 至 3.6V
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- TSOP-I
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- 48引脚
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- 55ns
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- -40°C
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- 85°C
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- -
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- -
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- MSL 3 - 168小时