FM1808B-SG

产品概述

• 256Kbit (32 K × 8) Bytewide F-RAM memory
• High-endurance 100 trillion (1014) read/writes
• 151-year data retention
• Advanced high-reliability ferroelectric process
• Industry-standard 32 K × 8 SRAM and EEPROM pinout
• 70-ns access time, 130-ns cycle time
• Superior to battery-backed SRAM modules
• Low power consumption(active current 15mA (max), standby current 25µA (typ))
• Voltage operation: VDD = 4.5V to 5.5V
• Industrial temperature range from -40⁰C to +85⁰C