UCC27519DBVT

产品概述

The UCC27519DBVT is a single-channel high-speed low-side Gate Driver Device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, it can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17ns. It provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD=12V. It is designed to operate over a wide VDD range of 4.5 to 18V and a wide temperature range of -40 to 140°C. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

• Gate-driver device offering superior replacement of NPN and PNP discrete solutions
• Outputs held low during VDD-UVLO (ensures glitch-free operation at power up and power-down)
• CMOS input logic threshold (function of supply voltage with hysteresis)
• Hysteretic-logic thresholds for high noise immunity
• EN pin for enable function (allowed to be no connect)
• Output held low when input pins are floating
• Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
• 17ns Typical fast propagation delay
• Green product and no Sb/Br

应用

电源管理, 电机驱动与控制, 替代能源