产品概述
The LMG5200 device, an 80V, 10A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaNFET driver in a half-bridge configuration
- Ideal for isolated and non-isolated applications
- Gate driver capable of up to 10MHz switching
- Class D amplifiers for audio
应用
音频, 电机驱动与控制, 电源供给, 电信
产品信息
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- 半桥
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- GaN HEMT, MOSFET
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- 9引脚
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- QFM
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- 4.75V
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- 5.25V
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- -40°C
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- 125°C
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- 29.5ns
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- 29.5ns
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- MSL 3 - 168小时