UCC27517DBVT

产品概述

The UCC27517DBVT is a 1-channel High-speed Low-side Gate Driver that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27517 can source and sink high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13ns. The UCC27517 provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD =12V. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power semiconductor devices. It features a dual-input design which offers flexibility of implementing both inverting (IN- pin) and non-inverting (IN+ pin) configurations with the same device.

  • 4A Peak source and 4A peak sink asymmetrical drive
  • Fast propagation delays (13ns)
  • Fast rise and fall times (9ns and 7ns typical)
  • Outputs held low during VDD UVLO
  • TTL and CMOS compatible input logic threshold (independent of supply voltage)
  • Hysteretic-logic thresholds for high noise immunity
  • Dual-input design (choice of an inverting (IN- pin)/non-inverting (IN+ pin) driver configuration)
  • Unused input pin can be used for enable or disable function
  • Output held low when input pins are floating
  • Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
  • Green product and no Sb/Br

应用

电源管理, 信号处理, 替代能源, 电机驱动与控制

产品信息


:
1放大器

:
低压侧

:
IGBT, MOSFET

:
5引脚

:
SOT-23

:
反相, 非反相

:
4A

:
4A

:
4.5V

:
18V

:
-40°C

:
140°C

:
13ns

:
13ns

:
-

:
MSL 1 -无限制

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