产品概述
The IR2011PBF is a high power high speed power MOSFET Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Independent low and high-side channels
- Input logic HIN/LIN active high
- Under-voltage lockout for both channels
- 3.3 and 5V Logic compatible
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
应用
电源管理, 电机驱动与控制
产品信息
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- 2放大器
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- 高压侧和低压侧
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- MOSFET
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- 8引脚
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- DIP
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- 反相
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- 1A
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- 1A
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- 10V
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- 20V
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- -40°C
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- 125°C
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- 80ns
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- 75ns
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- -
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- -