产品概述
The L6393D is a high voltage half-bridge Gate Driver manufactured with the BCD™ offline technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600V. The logic inputs are CMOS/TTL compatible down to 3.3V for the easy interfacing microcontroller/DSP. The IC embeds an uncommitted comparator available for protections against overcurrent and over-temperature.
- CMOS/TTL inputs with hysteresis
- Integrated bootstrap diode
- Uncommitted comparator
- Adjustable dead-time
- Compact and simplified layout
- Bill of material reduction
- Flexible, easy and fast design
- dV/dt immunity of ±50V/ns in full temperature range
- Driver current capability - 290mA Source and 430mA sink
- 75/35ns Rise/fall with 1nF load switching time
应用
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产品信息
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- 2放大器
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- 半桥
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- IGBT, MOSFET
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- 14引脚
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- SOIC
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- 非反向
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- 290mA
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- 430mA
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- 10V
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- 20V
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- -40°C
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- 125°C
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- 125ns
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- 125ns
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- -
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- MSL 3 - 168小时