产品概述
The AT45DB081E-SHN-B is a 1.7V minimum, serial-interface sequential access Flash Memory ideally suited for a wide variety of digital voice, image, program code and data storage applications. This also supports the RapidS serial interface for applications requiring very high speed operation. Its 8650752-bit of memory are organized as 4096 pages of 256 or 264 bytes each. In addition to the main memory, the memory also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (-bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
- Continuous read capability through entire array
- Two fully independent SRAM data buffers
- Program and erase suspend/resume
- 100000 Program/erase cycles per page minimum endurance
应用
成像, 视频和目视, 音频, 通信与网络, 工业
产品信息
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- 串行NOR
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- 8Mbit
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- 4096 页 x 256字节
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- SPI
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- SOIC
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- 8引脚
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- 85MHz
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- -
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- 1.7V
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- 3.6V
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- -40°C
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- 85°C
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- 3V Serial NOR Flash Memories
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- MSL 1 -无限制