产品概述
The FQP13N10 is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
- 175°C maximum junction temperature rating
产品信息
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- N沟道
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- 100V
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- 12.8A
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- 0.142ohm
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- TO-220AB
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- 通孔
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- 10V
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- 4V
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- 65W
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- 3引脚
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- 175°C
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- -
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