产品概述
The FDC638APZ is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
- High performance Trench technology for extremely low RDS (ON)
- 8nC typical low gate charge
产品信息
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- P沟道
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- 20V
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- 4.5A
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- 0.037ohm
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- SuperSOT
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- 表面安装
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- 12V
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- 800mV
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- 1.6W
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- 6引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制