产品概述
The FDD6N50TM_WS is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 12.8nC typical low gate charge
- 9pF typical low Crss
产品信息
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- N沟道
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- 500V
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- 6A
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- 0.76ohm
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- TO-252AA
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- 表面安装
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- 10V
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- 5V
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- 89W
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- 3引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制