产品概述
The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
应用
电源管理, 消费电子产品, 计算机和计算机周边
产品信息
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- N沟道
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- 30V
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- 12A
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- 0.02ohm
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- PowerPAK 1212
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- 表面安装
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- 10V
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- 1V
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- 15.6W
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- 8引脚
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- 150°C
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- -
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- -
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