产品概述
The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
- 900V Drain to gate voltage
- ±30V Gate to source voltage
- 0.833°C/W Thermal resistance, junction to case
- 50°C/W Thermal resistance, junction to ambient
应用
工业
产品信息
- :
- N沟道
- :
- 900V
- :
- 9A
- :
- 1.3ohm
- :
- TO-3PN
- :
- 通孔
- :
- 10V
- :
- 4V
- :
- 150W
- :
- 3引脚
- :
- 150°C
- :
- -
- :
- -
- :
- -