产品概述
The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
应用
射频通信
产品信息
- :
- 500V
- :
- 4.5A
- :
- 200W
- :
- -
- :
- 100MHz
- :
- DE-150
- :
- 6引脚
- :
- 175°C
- :
- -
- :
- -