产品概述
The FQP19N20C is a 200V N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (typical 40.5nC)
- Low Crss (typical 85pF)
- 100% avalanche tested
- ±30V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.9°C/W thermal resistance, junction to case
产品信息
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- N沟道
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- 200V
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- 19A
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- 140mohm
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- TO-220AB
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- 通孔
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- 10V
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- 4V
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- 139W
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- 3引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制