产品概述
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 8.7nC typical low gate charge
- 20pF typical low Crss
产品信息
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- N沟道
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- 100V
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- 10A
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- 0.142ohm
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- TO-252AA
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- 表面安装
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- 10V
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- 2V
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- 40W
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- 3引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制