产品概述
The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (28nC)
- Low Crss (12pF)
- 100% avalanche tested
产品信息
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- N沟道
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- 650V
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- 7A
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- 1.2ohm
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- TO-220F
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- 通孔
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- 10V
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- 4V
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- 52W
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- 3引脚
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- 150°C
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- -
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