产品概述
The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- Low conduction losses
应用
电源管理
产品信息
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- 互补N与P沟道
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- 30V
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- 2.5A
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- 0.062ohm
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- TSOP
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- 表面安装
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- 4.5V
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- 1.5V
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- 830mW
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- 6引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制