产品概述
The FQB19N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 31nC typical low gate charge
- 30pF typical low Crss
产品信息
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- N沟道
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- 200V
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- 21A
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- 0.11ohm
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- TO-263AB
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- 表面安装
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- 10V
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- 2V
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- 3.13W
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- 2引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制