产品概述
The SI1902DL-T1-E3 is a dual N-channel MOSFET intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250mA) need to be switched, either directly or by using a level shift configuration. It offers improved ON-resistance value and enhanced thermal performance.
- ±12V Gate to source voltage
- 1A Pulsed drain current
应用
工业, 电源管理
产品信息
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- N沟道
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- 20V
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- 700mA
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- 0.32ohm
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- SC-70
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- 表面安装
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- 4.5V
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- 1.5V
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- 200mW
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- 6引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制