产品概述
The FDG6322C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
- Gate-source Zener for ESD ruggedness
应用
工业, 电源管理
产品信息
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- 互补N与P沟道
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- 25V
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- 220mA
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- 2.6ohm
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- SC-70
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- 表面安装
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- 4.5V
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- 850mV
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- 300mW
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- 6引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制