产品概述
The NGTG15N60S1EG is a 600V Insulated Gate Bipolar Transistor (IGBT) well suited for motor drive control and other hard switching applications. The IGBT features a robust and cost effective Non-Punch Through (NPT) Trench construction and provides superior performance in demanding switching applications.
- Low on state voltage and minimal switching loss
- Low saturation voltage resulting in low conduction loss
- Low switching loss in higher frequency applications
- 5µs Short-circuit capability
应用
电机驱动与控制, 工业
产品信息
- :
- 30A
- :
- 1.75V
- :
- 117W
- :
- 600V
- :
- TO-220
- :
- 3引脚
- :
- 150°C
- :
- -
- :
- -
- :
- -