产品概述
The HGTG20N60A4 is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 55ns at TJ = 125°C Fall time
产品信息
- :
- 70A
- :
- 2.7V
- :
- 290W
- :
- 600V
- :
- TO-247
- :
- 3引脚
- :
- 150°C
- :
- -
- :
- -
- :
- -