产品概述
The IGW50N60H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
应用
替代能源, 电源管理
产品信息
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- 50A
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- 2.3V
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- 333W
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- 600V
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- TO-247
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- 3引脚
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- 175°C
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- -
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- -
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