产品概述
The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
- Fourth generation IGBT
- Enhancement mode type
- Fast switching
- Operating frequency up to 50KHz
- Maximum collector emitter saturation voltage of 2.45V
- FRD included between emitter and collector
- Collector emitter voltage VCES of 600V
- DC collector current of 50A
- Junction temperature of 150°C
- Collector power dissipation of 240W
应用
电源管理, 消费电子产品, 便携式器材, 工业
产品信息
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- 50A
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- 2.45V
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- 240W
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- 600V
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- TO-3P
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- 3引脚
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- 150°C
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- -
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- -
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