产品概述
The IRG4PH50UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies up to 40kHz in hard switching, >200kHz in resonant mode. The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations. It is optimized for power conversion, SMPS, UPS and welding.
- High switching frequency capability than competitive IGBTs
- High efficiency
- Much lower conduction losses than MOSFETs
- More efficient than short-circuit rated IGBTs
应用
电源管理, 消费电子产品, 维护与修理, 电机驱动与控制
产品信息
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- 45A
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- 3.2V
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- 200W
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- 1.2kV
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- TO-247AC
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- 3引脚
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- 150°C
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- -
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- -
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- MSL 1 -无限制