产品概述
The IRG4PSC71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
- Creepage distance increased to 5.35mm
- High efficiency
- Maximum power density
- Optimized for specific application conditions
- HEXFRED™ diodes optimized for performance with IGBTs
应用
替代能源, 电源管理, 维护与修理, 电机驱动与控制
产品信息
- :
- 85A
- :
- 1.95V
- :
- 350W
- :
- 600V
- :
- TO-274AA
- :
- 3引脚
- :
- 150°C
- :
- IRG4 Series
- :
- -
- :
- -