产品概述
The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies >5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
应用
替代能源, 电源管理, 维护与修理
产品信息
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- 42A
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- 2.1V
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- 160W
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- 600V
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- TO-247AC
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- 3引脚
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- 150°C
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- -
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- -
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