产品概述
The NGTG50N60FLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
- Low saturation voltage using Trench with field-stop technology
- Low switching loss - Reduces system power dissipation
- Optimized for high speed switching
- 5µs Short-circuit capability
应用
电源管理, 替代能源
产品信息
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- 100A
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- 1.65V
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- 223W
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- 600V
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- TO-247
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- 3引脚
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- 150°C
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- -
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- -
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