产品概述
The IRGIB7B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and excellent current sharing in parallel operation.
- Square RBSOA
- Positive VCE (on) temperature coefficient
- Rugged transient performance
- Low EMI
- 10µs Short-circuit capability
应用
电机驱动与控制, 消费电子产品, 照明, 替代能源, 电源管理
产品信息
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- 12A
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- 2.2V
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- 39W
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- 600V
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- TO-220FP
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- 3引脚
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- 175°C
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