产品概述
The IRG4RC10SDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Minimizes power dissipation at up to 3kHz PWM frequency in inverter drives, up to 4kHz in brushless DC drives. The HEXFRED™ diodes optimized for performance with IGBT. Minimized recovery characteristics require less/no snubbing.
- Tight parameter distribution
- High efficiency
- Optimized for specific application conditions
- Lower losses than MOSFET’s conduction and diode losses
- 1.1V at 2A Typical extremely low voltage drop
应用
照明, 电源管理
产品信息
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- 14A
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- 1.7V
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- 38W
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- 600V
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- TO-252AA
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- 3引脚
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- 150°C
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- IRG4 Series
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- -
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- MSL 1 -无限制