产品概述
The NGTG50N60FWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
- Optimized for very low collector-to-emitter saturation voltage
- Low switching loss
- Reduces system power dissipation
- 5µs Short-circuit capability
应用
替代能源, 电源管理, 电机驱动与控制
产品信息
- :
- 100A
- :
- 1.45V
- :
- 223W
- :
- 600V
- :
- TO-247
- :
- 3引脚
- :
- 150°C
- :
- -
- :
- -
- :
- -